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參數(shù)資料
| 型號(hào)： | K4S643232E-TL60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 102K |
| 代理商： | K4S643232E-TL60 |
K4S643232E
CMOS SDRAM
- 5 -
Rev. 1.3 (Oct. 2001)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM.
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disables input buffers for power down mode.
A
0
~ A
10
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
10
, Column address : CA
0
~ CA
7
BA0,1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 3
Data input/output mask
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
DQ
0
~
31
Data input/output
Data inputs/outputs are multiplexed on the same pins.
V
DD
/V
SS
Power supply/ground
Power and ground for the input buffers and the core logic.
V
DDQ
/V
SSQ
Data output power/ground
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
NC
No Connection
This pin is recommended to be left No connection on the device.
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| K4S643232E-TL70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232E-TL70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TN50 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TN60 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TN70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TP60 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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