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參數(shù)資料
| 型號： | K4S643233F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| 中文描述： | 2Mx32移動SDRAM 90FBGA的CMOS內(nèi)存 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | K4S643233F |
K4S643233F-S(D)E/N/I/P
Rev. 1.5 Dec. 2002
CMOS SDRAM
The K4S643233F is 67,108,864 bits synchronous high data rate
Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri-
cated with SAMSUNG
′
s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst lengths and
programmable latencies allow the same device to be useful for a
variety of high bandwidth and high performance memory system
applications.
3.0V & 3.3 power supply
.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system
clock .
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).
Extended temperature operation (-25
°
C to 85
°
C).
Industrial temperature operation ( -40
°
C to 85
°
C).
90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).
GENERAL DESCRIPTION
FEATURES
512K x 32Bit x 4 Banks SDRAM
FUNCTIONAL BLOCK DIAGRAM
*Samsung Electronics reserves the right to change products or specification without notice.
Bank Select
Data Input Register
512K x 32
512K x 32
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
512K x 32
512K x 32
Timing Register
ORDERING INFORMATION
Part No.
-S(D)E/N ; Normal/Low Power, Temp : -25
°
C ~ 85
°
C.
-S(D)I/P ; Normal/Low Power, Temp : -40
°
C ~ 85
°
C.
Note :
1. In case of 40MHz Frequency, CL1 can be supported.
Max Freq.
133MHz(CL=3)
105MHz(CL=2)
105MHz(CL=2)
105MHz(CL=3)
*1
133MHz(CL=3)
105MHz(CL=2)
105MHz(CL=2)
105MHz(CL=3)
*1
Interface Package
K4S643233F-SE/N/I/P75
LVCMOS
90FBGA
Pb
K4S643233FSE/N/I/P1H
K4S643233F-SE/N/I/P1L
K4S643233F-DE/N/I/P75
90FBGA
Pb Free
K4S643233F-DE/N/I/P1H
K4S643233F-DE/N/I/P1L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643233H | Mobile-SDRAM |
| K4S643233H-C | Mobile-SDRAM |
| K4S643233H-F | Mobile-SDRAM |
| K4S643233H-F1H | Mobile-SDRAM |
| K4S643233H-F1L | Mobile-SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643233F-DE/P1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-DE/P1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-DE/P75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-SE/I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-SE/N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
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