- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374286 > K6F8016T6C (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號： | K6F8016T6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 173K |
| 代理商： | K6F8016T6C |
K6F8016T6C Family
Revision 0.0
July 2003
2
CMOS SRAM
Preliminary
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F8016T6C families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-FBGA-6.00x7.00
Name
Function
Name
Function
CS
1
, CS
2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
18
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
DNU
Do Not Use
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
CC
=3.3V, TA=25
°
C and not 100% tested
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
4μ
A
2)
Operating
(I
CC1
, Max)
4mA
K6F8016T6C-F
Industrial(-40~85
°
C)
2.7~3.6V
55
1)
/70ns
48-FBGA-6.00x7.00
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
1024 rows
512
×
16 columns
I/O Circuit
Column select
PIN DESCRIPTION
1
48 ball FBGA - Top View(Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
Vss
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
DNU
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
DNU
2
3
4
5
6
A
B
C
D
E
F
G
H
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
相關PDF資料 |
PDF描述 |
|---|---|
| K6F8016T6C-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF55 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6D-FF70 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6F8016T6C-FF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016T6C-FF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016U6A-EF70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA |
| K6F8016U6D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。