參數(shù)資料
型號(hào): K6F8016U6D-XF55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 3/9頁
文件大?。?/td> 154K
代理商: K6F8016U6D-XF55
K6F8016U6D Family
Revision 1.0
January 2005
3
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K6F8016U6D-FF55
K6F8016U6D-FF70
K6F8016U6D-XF55
K6F8016U6D-XF70
48-FBGA, 55ns, 3.0V
48-FBGA, 70ns, 3.0V
48-FBGA, 55ns, 3.0V, Lead Free
48-FBGA, 70ns, 3.0V, Lead Free
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 to V
CC
+0.3V(Max. 3.6V)
V
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 3.6
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
A
-40 to 85
°
C
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be low or high state)
CS
1
CS
2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
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