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參數(shù)資料
| 型號(hào)： | K6F8016U6D-XF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | K6F8016U6D-XF70 |
K6F8016U6D Family
Revision 1.0
January 2005
4
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: V
CC
+2.0V in case of pulse width
≤
20ns.
3. Undershoot: -2.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0
3.3
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.2
2)
0.6
V
Input low voltage
V
IL
-0.2
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTIC
1. Typical values are measured at V
CC
=3.0V, T
A
=25
°
C and not 100% tested.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or
LB=UB=V
IH
, V
IO
=Vss to Vcc
Cycle time=1
μ
s, 100%duty, I
IO
=0mA, CS
1
≤
0.2V,
LB
≤
0.2V or/and UB
≤
0.2V, CS
2
≥
Vcc-0.2V, V
IN
≤
0.2V or
V
IN
≥
V
CC
-0.2V
-1
-
1
μ
A
Average operating current
I
CC1
-
-
4
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty, CS
1
=V
IL
,
CS
2
=V
IH
, LB=V
IL
or/and UB=V
IL
, V
IN
=V
IL
or V
IH
70ns
-
-
22
mA
55ns
-
-
28
Output low voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Standby Current(CMOS)
I
SB1
Other input =0~Vcc
1) CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V(CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
-
4
15
μ
A
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