- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374286 > K6R1004V1C-L20 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). PDF資料下載
參數(shù)資料
| 型號(hào)： | K6R1004V1C-L20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（3.3V的）。 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | K6R1004V1C-L20 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 6 -
CCPCCCRPreliminary
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
NOTES
(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or
V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
device.
5. Transition is measured
±
200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1)
(OE= Clock)
Address
CS
t
WP(2)
t
DW
t
DH
Valid Data
WE
Data in
Data out
t
WC
t
WR(5)
t
AW
t
CW(3)
High-Z(8)
High-Z
OE
t
OHZ(6)
t
AS(4)
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE=Low Fixed)
Address
CS
t
WP1(2)
t
DW
t
DH
t
OW
t
WHZ(6)
Valid Data
WE
Data in
Data out
t
WC
t
AS(4)
t
WR(5)
t
AW
t
CW(3)
(10)
(9)
High-Z(8)
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1004V1C-P10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1B | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1004V1C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。