參數(shù)資料
型號(hào): K6R1004V1D-KC10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 256Kx4位(與OE)的高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁數(shù): 9/9頁
文件大?。?/td> 137K
代理商: K6R1004V1D-KC10
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 9 -
CCPCCCRPreliminary
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
PACKAGE DIMENSIONS
Units:millimeters/Inches
#1
32-SOJ-400
#32
20.95
±
0.12
0.825
±
0.005
1
0
-0.05
-0.002
MAX
21.36
0.841
0.20
0.008
9.40
±
0.25
0.370
±
0.010
MAX
0.148
3.76
MIN
0.69
0.027
( 0.051
( 0.051
( 0.0375
-0.05
-0.002
0.43
0.017
-0.05
-0.002
0.71
0.028
1.27
0.050
#16
#17
0.10 MAX
11.18
±
0.12
0.440
±
0.005
相關(guān)PDF資料
PDF描述
K6R1004V1D-KI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004V1D-JI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004V1C-P 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-P20 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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