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參數(shù)資料
| 型號(hào)： | K6X0808C1D-RF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 166K |
| 代理商： | K6X0808C1D-RF70 |
CMOS SRAM
K6X0808C1D Family
Revision 1.0
December 2003
2
32Kx8 bit Low Power full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 32K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
GENERAL DESCRIPTION
The K6X0808C1D families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2,
Max)
K6X0808C1D-F
Industrial(-40~85
°
C)
4.5~5.5V
55
1)
/70ns
15
μ
A
25mA
28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
K6X0808C1D-Q
Automotive(-40~125
°
C)
25
μ
A
28-SOP-450, 28-TSOP1-0813.4F
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Pin Name
Function
Pin Name
Function
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
14
Address Inputs
NC
No connect
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
28-DIP
28-SOP
15
16
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
28-TSOP
Type1 - Forward
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
28-TSOP
Type1 - Reverse
A11
A9
A8
A13
WE
VCC
A3
A4
A14
A12
A7
A6
A5
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
WE
OE
Control
logic
Row
Addresses
Column Addresses
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X0808C1D-TF55 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TF70 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TQ55 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TQ70 | 32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D | 32Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X0808C1D-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TQ55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808C1D-TQ70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6X0808T1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
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