參數(shù)資料
型號: K6X4008T1F-GB55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: PT05SE18-32S
中文描述: 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM
文件頁數(shù): 8/9頁
文件大?。?/td> 174K
代理商: K6X4008T1F-GB55
K6X4008T1F Family
CMOS SRAM
Revision 1.0
September 2003
8
PACKAGE DIMENSIONS
Units: millimeters(inches)
32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)
0~8
°
#32
20.47
±
0.20
0.806
±
0.008
MAX
20.87
0.822
MAX
2.74
±
0.20
0.108
±
0.008
3.00
0.118
MIN
0.002
0.05
0.004 MAX
0.10 MAX
#1
( 0.028
1
0
11.43
±
0.20
0.450
±
0.008
0.80
±
0.20
0.031
±
0.008
0.20
+0.004
0.008
-0.002
14.12
±
0.30
0.556
±
0.012
#17
#16
1.27
0.050
0.41
+0.100
0.016
-0.002
+0.004
32 PIN SMALLER THIN SMALL OUTLINE PACKAGE TYPE I (0813.4F)
1.00
±
0.10
0.039
±
0.004
1.20
0.047
MAX
8.40
0.331
1
#1
( 0.020
11.80
±
0.10
0.465
±
0.004
0.45 ~0.75
0.018 ~0.030
13.40
±
0.20
0.528
±
0.008
+0.10
0.15
-0.05
0.006
-0.002
0~8
°
0.20
+0.10
0.008
-0.002
+0.004
0.50
0.0197
( 0.010
MIN
0.05
0.002
MAX
8
0
TYP
0.25
0.010
#16
#32
#17
相關(guān)PDF資料
PDF描述
K6X4008T1F-YF55 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YB85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VB70 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GB70 D38999/26WA98SN
K6X4008T1F-GB85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6X4008T1F-GB70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GB85 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GF70 制造商:Samsung Semiconductor 功能描述:
K6X4008T1F-GF85 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM