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參數(shù)資料
| 型號(hào)： | K6X4008T1F-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | K6X4008T1F-Q |
K6X4008T1F Family
CMOS SRAM
Revision 1.0
September 2003
5
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Commercial product: T
A
=0 to 70
°
C, Industrial product: T
A
=-40 to 85
°
C, Automotive product: T
A
=-40 to 125
°
C)
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
Parameter List
Symbol
Speed Bins
Units
55ns
1)
70ns
85ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
t
RC
55
-
70
-
85
-
ns
Address access time
t
AA
-
55
-
70
-
85
ns
Chip select to output
t
CO
-
55
-
70
-
85
ns
Output enable to valid output
t
OE
-
25
-
35
-
40
ns
Chip select to low-Z output
t
LZ
10
-
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
20
0
25
0
25
ns
Output disable to high-Z output
t
OHZ
0
20
0
25
0
25
ns
Output hold from address change
t
OH
10
-
10
-
10
-
ns
Write
Write cycle time
t
WC
55
-
70
-
85
-
ns
Chip select to end of write
t
CW
45
-
60
-
70
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
45
-
60
-
70
-
ns
Write pulse width
t
WP
40
-
55
-
55
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
20
0
25
0
25
ns
Data to write time overlap
t
DW
25
-
30
-
35
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. 55ns, 70ns product
DATA RETENTION CHARACTERISTICS
Item
1. Typical values are measured at T
A
= 25
°
C and not 100% tested.
Symbol
Test Condition
Min
Typ
1)
Max
Unit
Vcc for data retention
V
DR
CS
≥
Vcc-0.2V
2.0
-
3.6
V
Data retention current
I
DR
Vcc=3.0V, CS
≥
Vcc-0.2V
K6X4008T1F-B
-
0.5
10
μ
A
μ
A
μ
A
K6X4008T1F-F
-
10
K6X4008T1F-Q
-
20
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008T1F-VB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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