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參數(shù)資料
| 型號： | K6X4008T1F-VB70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 174K |
| 代理商： | K6X4008T1F-VB70 |
K6X4008T1F Family
CMOS SRAM
Revision 1.0
September 2003
3
PRODUCT LIST
Commercial Products(0~70
°
C)
1. Operating voltage range is 3.0V~3.6V
Industrial Products(-40~85
°
C)
Automotive Products(-40~125
°
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X4008T1F-GB55
1)
K6X4008T1F-GB70
K6X4008T1F-GB85
K6X4008T1F-YB55
1)
K6X4008T1F-YB70
K6X4008T1F-YB85
K6X4008T1F-VB55
1)
K6X4008T1F-VB70
K6X4008T1F-VB85
K6X4008T1F-MB55
1)
K6X4008T1F-MB70
K6X4008T1F-MB85
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-sTSOP1-F, 55ns, LL
32-sTSOP1-F, 70ns, LL
32-sTSOP1-F, 85ns, LL
32-TSOP2-F, 55ns, LL
32-TSOP2-F, 70ns, LL
32-TSOP2-F, 85ns, LL
32-TSOP2-R, 55ns, LL
32-TSOP2-R, 70ns, LL
32-TSOP2-R, 85ns, LL
K6X4008T1F-GF55
1)
K6X4008T1F-GF70
K6X4008T1F-GF85
K6X4008T1F-YF55
1)
K6X4008T1F-YF70
K6X4008T1F-YF85
K6X4008T1F-VF55
1)
K6X4008T1F-VF70
K6X4008T1F-VF85
K6X4008T1F-MF55
1)
K6X4008T1F-MF70
K6X4008T1F-MF85
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-sTSOP1-F, 55ns, LL
32-sTSOP1-F, 70ns, LL
32-sTSOP1-F, 85ns, LL
32-TSOP2-F, 55ns, LL
32-TSOP2-F, 70ns, LL
32-TSOP2-F, 85ns, LL
32-TSOP2-R, 55ns, LL
32-TSOP2-R, 70ns, LL
32-TSOP2-R, 85ns, LL
K6X4008T1F-GQ70
K6X4008T1F-GQ85
K6X4008T1F-YQ70
K6X4008T1F-YQ85
K6X4008T1F-VQ70
K6X4008T1F-VQ85
32-SOP, 70ns, L
32-SOP, 85ns, L
32-sTSOP1-F, 70ns, L
32-sTSOP1-F, 85ns, L
32-TSOP2-F, 70ns, L
32-TSOP2-F, 85ns, L
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in low or high state)
CS
OE
WE
I/O
Mode
Power
H
X
1)
H
X
1)
H
High-Z
Deselected
Standby
L
High-Z
Output Disabled
Active
L
L
H
Dout
Read
Active
L
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
Item
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.2 to V
CC
+0.3(max. 3.9V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 3.9
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6F4008T1F-B
-40 to 85
K6F4008T1F-F
-40 to 125
K6F4008T1F-Q
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X4008T1F-GB70 | D38999/26WA98SN |
| K6X4008T1F-GB85 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-GF55 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-GF70 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-GF85 | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008T1F-VB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-VQ70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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