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參數(shù)資料
| 型號： | K6X4008T1F-VQ70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 174K |
| 代理商： | K6X4008T1F-VQ70 |
K6X4008T1F Family
CMOS SRAM
Revision 1.0
September 2003
2
512K
×
8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
various operating temperature range and have various pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K
×
8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
A
0
~A
18
Address Inputs
Vcc
Power
WE
Write Enable Input
Vss
Ground
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
PRODUCT FAMILY
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
Product Family Operating Temperature
Vcc
Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
10
μ
A
Operating
(I
CC2
, Max)
K6X4008T1F-B
Commercial(0~70
°
C)
2.7~3.6V
55
1)
/70
2)
/85ns
25mA
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F/R
K6X4008T1F-F
Industrial(-40~85
°
C)
10
μ
A
K6X4008T1F-Q
Automotive(-40~125
°
C)
70
2)
/85ns
20
μ
A
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F
FUNCTIONAL BLOCK DIAGRAM
32-SOP
32-TSOP2
(Forward)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Reverse)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Control
logic
32-
TSOP1
Row
Addresses
Column Addresses
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4008T1F-VQ85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-YB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-YB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-YB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6X4008T1F-YF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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