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參數(shù)資料
| 型號： | K6X4016C3F-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power full CMOS Static RAM |
| 中文描述： | 256Kx16位充分的CMOS低功耗靜態(tài)存儲器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 131K |
| 代理商： | K6X4016C3F-Q |
K6X4016C3F Family
CMOS SRAM
Revision 1.0
September 2003
2
256Kx16 bit Low Power full CMOS Static RAM
GENERAL DESCRIPTION
The K6X4016C3F families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families sup-
port various operating temperature range and small pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 256Kx16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL compatible
Package Type: 44-TSOP2-400F
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6X4016C3F-B
Commercial(
0~70
°
C)
4.5~5.5V
55
1)
/70ns
20
μ
A
30 mA
44-TSOP2-400F
K6X4016C3F-F
Industrial (-40~85
°
C)
K6X4016C3F-Q
Automotive (-40~125
°
C)
30
μ
A
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
LB
Lower Byte (I/O
1~8
)
OE
Output Enable Input
UB
Upper Byte(I/O
9~16
)
WE
Write Enable Input
Vcc
Power
A
0
~A
17
Address Inputs
Vss
Ground
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS
LB
Control
logic
Row
Addresses
Column Addresses
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X4016C3F-TB55 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TF55 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TF70 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TQ55 | 256Kx16 bit Low Power full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4016C3F-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70T00 | 制造商:Samsung SDI 功能描述: |
| K6X4016C3F-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
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