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參數(shù)資料
| 型號： | K6X4016C3F-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power full CMOS Static RAM |
| 中文描述： | 256Kx16位充分的CMOS低功耗靜態(tài)存儲器 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 131K |
| 代理商： | K6X4016C3F-Q |
K6X4016C3F Family
CMOS SRAM
Revision 1.0
September 2003
8
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
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相關(guān)代理商/技術(shù)參數(shù) |
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| K6X4016C3F-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70T00 | 制造商:Samsung SDI 功能描述: |
| K6X4016C3F-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
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