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參數(shù)資料
| 型號(hào)： | K6X4016C3F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power full CMOS Static RAM |
| 中文描述： | 256Kx16位充分的CMOS低功耗靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 131K |
| 代理商： | K6X4016C3F |
K6X4016C3F Family
CMOS SRAM
Revision 1.0
September 2003
3
PRODUCT LIST
Commercial Products(0~70
°
C)
Industrial Products(-40~85
°
C)
Automotive Products(-40~125
°
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X4016C3F-TB55
K6X4016C3F-TB70
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
K6X4016C3F-TF55
K6X4016C3F-TF70
44-TSOP2-F, 55ns, LL
44-TSOP2-F, 70ns, LL
K6X4016C3F-TQ55
K6X4016C3F-TQ70
44-TSOP2-F, 55ns, L
44-TSOP2-F, 70ns, L
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5V(max. 7.0V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
-
Operating Temperature
T
A
0 to 70
°
C
K6X4016C3F-B
-40 to 85
K6X4016C3F-F
-40 to 125
K6X4016C3F-Q
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X4016C3F-B | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-F | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-Q | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB55 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 256Kx16 bit Low Power full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4016C3F-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
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