- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374291 > K6X4016C3F (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx16 bit Low Power full CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K6X4016C3F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power full CMOS Static RAM |
| 中文描述： | 256Kx16位充分的CMOS低功耗靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 131K |
| 代理商： | K6X4016C3F |
K6X4016C3F Family
CMOS SRAM
Revision 1.0
September 2003
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product: T
A
=0 to 70
°
C, otherwise specified
Industrial Product: T
A
=-40 to 85
°
C, otherwise specified
Automotive Product T
A
=-40 to 125
°
C, otherwise specified
2. Overshoot: V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot: -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.5
2)
V
Input low voltage
V
IL
-0.5
3)
-
0.8
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or
WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
μ
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
5
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA
CS
≤
0.2V, V
IN
≥
0.2V or V
IN
≥
Vcc-0.2V
-
-
7
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
30
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
0.4
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
K6X4016C3F-B
-
-
20
μ
A
K6X4016C3F-F
-
-
K6X4016C3F-Q
-
-
30
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6X4016C3F-B | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-F | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-Q | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB55 | 256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 256Kx16 bit Low Power full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X4016C3F-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
| K6X4016C3F-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power full CMOS Static RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。