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參數(shù)資料
| 型號(hào)： | K6X4016T3F-TQ85 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | K6X4016T3F-TQ85 |
K6X4016T3F Family
CMOS SRAM
Revision 1.0
August 2003
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6X4016T3F families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support var-
ious operating temperature range and have 44-TSOP2 pack-
age type for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 256K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
LB
Lower Byte (I/O
1~8
)
A
0
~A
17
Address Inputs
UB
Upper Byte (I/O
9~16
)
I/O
1
~I/O
16
Data Input/Output
NC
No Connection
PRODUCT FAMILY
1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V).
2. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
10
μ
A
10
μ
A
20
μ
A
Operating
(I
CC2
, Max)
K6X4016T3F-B
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
Automotive(-40~125
°
C)
2.7~3.6V
55
1)
/70
2)
/85ns
25mA
44-TSOP2-400F
K6X4016T3F-F
K6X4016T3F-Q
70
2)
/85ns
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
WE
OE
UB
CS
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
Control
logic
Row
Addresses
Column Addresses
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