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參數(shù)資料
| 型號： | K6X8008T2B-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS SRAM |
| 中文描述： | CMOS SRAM的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 129K |
| 代理商： | K6X8008T2B-Q |
K6X8008T2B Family
Revision 1.0
September 2003
4
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Industrial Product: T
A
=-40 to 85
°
C, otherwise specified.
Automotive Product: T
A
=-40 to 125
°
C, otherwise specified.
2. Overshoot: V
CC
+3.0V in case of pulse width
≤
30ns.
3. Undershoot: -3.0V in case of pulse width
≤
30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
K6X8008T2B Family
2.7
3.0/3.3
3.6
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
K6X8008T2B Family
2.2
-
Vcc+0.3
2)
0.6
V
Input low voltage
V
IL
K6X8008T2B Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ Max Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH,
CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Average operating current
I
CC1
Cycle time=1
μ
s, 100%duty, I
IO
=0mA, CS
1
≤
0.2V, CS
2
≥
Vcc-0.2V,
V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
-
-
3
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
-
-
30
mA
Output low voltage
V
OL
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH
, CS
2
=V
IL
, Other inputs=V
IH
or V
IL
-
-
0.4
mA
Standby Current(CMOS)
I
SB1
Other input =0~Vcc,
1) CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V (CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
K6X8008T2B-F
-
-
15
μ
A
K6X8008T2B-Q
-
-
25
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