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參數(shù)資料
| 型號： | K6X8008T2B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS SRAM |
| 中文描述： | CMOS SRAM的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 129K |
| 代理商： | K6X8008T2B |
K6X8008T2B Family
Revision 1.0
September 2003
2
CMOS SRAM
1Mx8 bit Low Power and Low Voltage full CMOS Static RAM
GENERAL DESCRIPTION
The K6X8008T2B families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families sup-
port various operating temperature range for user flexibility of
system design. The families also support low data retention
voltage for battery back-up operation with low data retention
current.
FEATURES
Process Technology: Full CMOS
Organization: 1M x8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three state outputs
Package Type: 44-TSOP2-400F
Name
Function
Name
Function
CS
1
, CS
2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
A
0
~A
19
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
NC
No Connect
PRO
DUCT FAMILY
1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
25
μ
A
Operating
(I
CC2
, Max)
K6X8008T2B-F
Industrial(-40~85
°
C)
Automotive(-40~125
°
C)
2.7~3.6V
55
1)
/70ns
30mA
44-TSOP2-400F
K6X8008T2B-Q
70ns
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Vcc
Vss
Precharge circuit.
Memory array
1024 rows
1024
×
8 columns
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
CS1
Control Logic
CS2
Row
Addresses
Column Addresses
A4
A3
A2
A1
A0
CS1
NC
NC
I/O1
I/O2
Vcc
Vss
I/O3
I/O4
NC
NC
WE
A19
A18
A17
A16
A15
A5
A6
A7
OE
CS2
A8
NC
NC
I/O8
I/O7
Vss
Vcc
I/O6
I/O5
NC
NC
A9
A10
A11
A12
A13
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A14
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PDF描述 |
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| K6X8016T3B-Q | CONNECTOR ACCESSORY |
| K6X8016T3B-TF55 | 512Kx16 bit Low Power Full CMOS Static RAM |
| K6X8016T3B-TF70 | 512Kx16 bit Low Power Full CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6X8008T2B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6X8008T2B-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6X8016C3B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power Full CMOS Static RAM |
| K6X8016T3B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power Full CMOS Static RAM |
| K6X8016T3B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power Full CMOS Static RAM |
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