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參數(shù)資料
| 型號(hào)： | K6X8016T3B-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | K6X8016T3B-Q |
K6X8016T3B Family
Revision 1.0
September 2003
6
CMOS SRAM
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
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