型號: | K7-H5 |
廠商: | MITSUMI ELECTRIC CO LTD |
元件分類: | 可變電感 |
英文描述: | Adjustable Type Coils |
中文描述: | UNSHIELDED, 1 uH - 1000 uH, VARIABLE INDUCTOR |
封裝: | DIP-6 |
文件頁數(shù): | 2/4頁 |
文件大?。?/td> | 184K |
代理商: | K7-H5 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
K7-J | Adjustable Type Coils |
K7257M | SAW Components |
K7A203200B-QC(I)14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
K7A203200B-QC14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
K7A401800B-QC | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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K7H803654C-FC16T00 | 制造商:Samsung Semiconductor 功能描述:8MB 8MSYNC DOUBLE DATA RATE X36 BGA - Tape and Reel |
K7I161882B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b2 SRAM |
K7I161882B-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
K7I161882B-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
K7I161882B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |