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參數資料
| 型號： | K7D323674A-HC40 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mb A-die DDR SRAM Specification |
| 中文描述： | 32兆甲芯片的DDR SRAM的規(guī)范 |
| 文件頁數： | 2/19頁 |
| 文件大?。?/td> | 494K |
| 代理商： | K7D323674A-HC40 |
Rev 1.4
Oct. 2005
1Mx36 & 2Mx18 SRAM
- 2 -
K7D321874A
K7D323674A
Document Title
32M DDR SYNCHRONOUS SRAM
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.1
Rev 0.2
Remark
Advance
Advance
Advance
History
Initial document.
Remove /G operation thru the Spec.
- Remove /G from PUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURA-
TION, TRUTH TABLE and TIMING WAVEFORMs
Add 300MHz Speed bin.
- Add Part ID at ORDERING INFORMATION & I
DD30
at DC CHARACTERIS-
TICS
Change I
LI
and I
Lo
at DC CHARCATERISTICS
- I
LI
: MIN -1 -> -3, MAX 1 -> 3, I
Lo
: MIN -1 -> -5, MAX 1 -> 5
Change the comment of Programmable Impedance Output Driver.
Change RECOMMENDED DC OPERATING CONDITIONS.
- V
REF
: Min 0.68 -> 0.65, Max 1.0 -> 0.85
Change PIN CAPACITANCE : C
IN
: 3 -> 3.1
Change AC TEST CONDITIONS : T
R
/R
F
: 0.4/0.4 -> 0.5/0.5
Change AC TIMING CHARACTERISTICS
- t
CHCL
: t
KHKL
-0.1 -> t
KHKL
-0.2 , t
CLCH
: t
KLKH
-0.1 -> t
KLKH
-0.2
- t
CXCV
: 2.10 -> 2.30
Change VDDQ RANGE
- In FEATURES : 1.5V V
DDQ
-> 1.5~.1.8V V
DDQ
- In RECOMENDED DC OPERATING CONDITIONS : Max V
DDQ
: 1.6 -> 1.9
Change TRUTH TABLE : Remove Clock Stop
Change DC CHARACTERISTICS
- x36 I
DD
:
I
DD50
:
950 -> 1050, I
DD45
: 850 -> 950, I
DD40
: 800 -> 860, I
DD30
: 750 -> 760
- x18 I
DD
:
I
DD50
:
850 -> 1000, I
DD45
: 800 -> 900, I
DD40
: 750 -> 810, I
DD30
: 700 -> 710
- I
SB1
: 150 -> 200
Change PIN CAPACITANCE : C
IN
: 3.1 -> 3.2, C
OUT
: 4 -> 4.2
Change AC TIMING CHARACTERISTICS
- MIN t
KHKL,
t
KHKL
: -40 : 1.1 -> 1.2, -30 : 1.1 -> 1.4
- MIN t
AVKH,
t
BVKH,
t
KHAX,
t
KHBX
: -45 : 0.25 -> 0.27
- t
KXCV
MIN/MAX : 0.8/2.3 -> 1.0/2.5
Change PACKAGE THERMAL CHARACTERISTICS
Draft Data
Dec. 2002
Jan. 2003
Feb. 2003
相關PDF資料 |
PDF描述 |
|---|---|
| K7D323674A-HGC33 | 32Mb A-die DDR SRAM Specification |
| K7D323674A-HGC37 | 32Mb A-die DDR SRAM Specification |
| K7D323674A-HGC40 | 32Mb A-die DDR SRAM Specification |
| K7D801871B-HC25 | 256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC30 | 256Kx36 & 512Kx18 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K7D323674A-HGC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mb A-die DDR SRAM Specification |
| K7D323674A-HGC37 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mb A-die DDR SRAM Specification |
| K7D323674A-HGC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mb A-die DDR SRAM Specification |
| K7D323674C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 SRAM |
| K7D801871B-HC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
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