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參數(shù)資料
| 型號： | K7D801871B-HC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 SRAM |
| 中文描述： | 256Kx36 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 270K |
| 代理商： | K7D801871B-HC25 |
Rev 4.0
256Kx36 & 512Kx18 SRAM
- 13
January. 2002
K7D801871B
K7D803671B
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing
between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conform-
ance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP control-
ler has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use
this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM. TCK must
be tied to V
SS
to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the
application of a logic 1, and may be left unconnected. But they may also be tied to V
DD
through a resistor. TDO should be left uncon-
nected.
TAP Controller State Diagram
JTAG Block Diagram
SRAM
CORE
BYPASS Reg.
Identification Reg.
Instruction Reg.
Control Signals
TAP Controller
TDO
SA
SA
TDI
TMS
TCK
Test Logic Reset
Run Test Idle
0
1
1
1
1
0
0
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
0
0
0
0
0
Select DR
Capture DR
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
1
1
1
1
1
JTAG Instruction Coding
NOTE
:
1. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs.
2. TDI is sampled as an input to the first ID register to allow for the serial
shift of the external TDI data.
3. Bypass register is initiated to V
SS
when BYPASS instruction is
invoked.
The Bypass Register also holds serially loaded TDI when exiting
the Shift DR states.
4. SAMPLE instruction dose not places DQs in Hi-Z.
IR2 IR1 IR0 Instruction
TDO Output
Notes
0
0
0
EXTEST
Boundary Scan Register
1
0
0
1
IDCODE
Identification Register
2
0
1
0
SAMPLE-Z
Boundary Scan Register
1
0
1
1
BYPASS
Bypass Register
3
1
0
0
SAMPLE
Boundary Scan Register
4
1
0
1
BYPASS
Bypass Register
3
1
1
0
BYPASS
Bypass Register
3
1
1
1
BYPASS
Bypass Register
3
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| K7D801871B-HC30 | 256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC33 | 256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC35 | 256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC37 | 256Kx36 & 512Kx18 SRAM |
| K7D803671B | 256Kx36 & 512Kx18 SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K7D801871B-HC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC35 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
| K7D801871B-HC37 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
| K7D803671B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
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