參數(shù)資料
型號(hào): K7D803671B-HC33
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx36 & 512Kx18 SRAM
中文描述: 256Kx36
文件頁數(shù): 13/16頁
文件大?。?/td> 270K
代理商: K7D803671B-HC33
Rev 4.0
256Kx36 & 512Kx18 SRAM
- 13
January. 2002
K7D801871B
K7D803671B
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing
between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conform-
ance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP control-
ler has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use
this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM. TCK must
be tied to V
SS
to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the
application of a logic 1, and may be left unconnected. But they may also be tied to V
DD
through a resistor. TDO should be left uncon-
nected.
TAP Controller State Diagram
JTAG Block Diagram
SRAM
CORE
BYPASS Reg.
Identification Reg.
Instruction Reg.
Control Signals
TAP Controller
TDO
SA
SA
TDI
TMS
TCK
Test Logic Reset
Run Test Idle
0
1
1
1
1
0
0
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
0
0
0
0
0
Select DR
Capture DR
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
1
1
1
1
1
JTAG Instruction Coding
NOTE
:
1. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs.
2. TDI is sampled as an input to the first ID register to allow for the serial
shift of the external TDI data.
3. Bypass register is initiated to V
SS
when BYPASS instruction is
invoked.
The Bypass Register also holds serially loaded TDI when exiting
the Shift DR states.
4. SAMPLE instruction dose not places DQs in Hi-Z.
IR2 IR1 IR0 Instruction
TDO Output
Notes
0
0
0
EXTEST
Boundary Scan Register
1
0
0
1
IDCODE
Identification Register
2
0
1
0
SAMPLE-Z
Boundary Scan Register
1
0
1
1
BYPASS
Bypass Register
3
1
0
0
SAMPLE
Boundary Scan Register
4
1
0
1
BYPASS
Bypass Register
3
1
1
0
BYPASS
Bypass Register
3
1
1
1
BYPASS
Bypass Register
3
相關(guān)PDF資料
PDF描述
K7D803671B-HC35 256Kx36 & 512Kx18 SRAM
K7D803671B-HC37 256Kx36 & 512Kx18 SRAM
K7I321882M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
K7I323682M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7D803671B-HC33000 制造商:Samsung 功能描述:8MSYNCDOUBLE DATA RATE SRAMX36BGA - Bulk
K7D803671B-HC33T00 制造商:Samsung Semiconductor 功能描述:8MSYNCDOUBLE DATA RATE SRAMX36BGA, T/R - Tape and Reel
K7D803671B-HC35 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7D803671B-HC37 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7FU12 制造商:3M Electronic Products Division 功能描述:SPP3 TRAY KIT FOR 12 FUSION SPLICES