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參數(shù)資料
| 型號(hào)： | K7D803671B-HC35 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 SRAM |
| 中文描述： | 256Kx36 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大小： | 270K |
| 代理商： | K7D803671B-HC35 |
Rev 4.0
256Kx36 & 512Kx18 SRAM
- 8 -
January. 2002
K7D801871B
K7D803671B
PIN CAPACITANCE
NOTE
: Periodically sampled and not 100% tested.(T
A
=25
°
C, f=1MHz)
Parameter
Symbol
C
IN
C
OUT
Test Condition
V
IN
=0V
V
OUT
=0V
Min
-
-
Max
4
5
Unit
pF
pF
Input Capacitance
Data Output Capacitance
DC CHARACTERISTICS
NOTE
:1. Minimum cycle. I
OUT
=0mA.
2. 50% read cycles.
3. |I
OH
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OH
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
4. |I
OL
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OL
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
5. Minimum Impedance Mode when ZQ pin is connected to V
ss
.
Parameter
Symbol
Min
Max
Unit
Note
Average Power Supply Operating Current(x36)
(Cycle time = t
KHKH
min)
I
DD37
I
DD35
I
DD33
I
DD30
I
DD25
I
DD37
I
DD35
I
DD33
I
DD30
I
DD25
-
880
850
750
670
600
830
800
700
620
550
mA
1,2
Average Power Supply Operating Current(x18)
(Cycle time = t
KHKH
min)
-
mA
1,2
Stop Clock Standby Current
(V
IN
=V
IH
or V
IL
, K=Low, K=Low)
Input Leakage Current
(V
IN
=V
SS
or V
DDQ
)
Output Leakage Current
(V
OUT
=V
SS
or V
DDQ
)
Output High Voltage(Programmable Impedance Mode)
Output Low Voltage(Programmable Impedance Mode)
Output High Voltage(I
OH
=-0.1mA)
Output Low Voltage(I
OL
=0.1mA)
I
SB1
-
150
mA
1
I
LI
-1
1
μ
A
I
LO
-1
1
μ
A
V
OH1
V
OL1
V
OH2
V
OL2
V
DDQ
/2
V
SS
V
DDQ
-0.2
V
SS
V
DDQ
V
DDQ
/2
V
DDQ
0.2
V
V
V
V
3
4
5
5
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|---|---|
| K7D803671B-HC37 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM |
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| K7I161882B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b2 SRAM |
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