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參數(shù)資料
| 型號(hào)： | K7I323682M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 12/17頁 |
| 文件大?。?/td> | 377K |
| 代理商： | K7I323682M |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
- 12 -
Rev 2.1
July. 2004
K7I323682M
K7I321882M
APPLICATION INRORMATION
THERMAL RESISTANCE
Note
: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. T
J
=T
A
+ P
D
x
θ
JA
PRMETER
SYMBOL
Typ
Unit
°
C
/W
°
C
/W
°
C
/W
NOTES
Junction to Ambient
θ
JA
θ
JC
θ
JB
20.8
Junction to Case
2.3
Junction to Pins
4.3
SRAM#1
SAR/W
BW
0
DQ
K
ZQ
CQ
CQ
K
C C
SRAM#4
R
Vt
R=50
Vt=V
REF
Vt
R
R=250
R=250
BW
1
SA
R/WLD3BW
0
CQ
CQ
ZQ
K
C C
BW
1
K
DQ
Address
R/W
LD
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
LD0
DQ
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
PIN CAPACITANCE
Note
: 1. Parameters are tested with RQ=250
and V
DDQ
=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
Typ
MAX
Unit
NOTES
Address Control Input Capacitance
C
IN
V
IN
=0V
4
5
pF
Input and Output Capacitance
C
OUT
V
OUT
=0V
6
7
pF
Clock Capacitance
C
CLK
-
5
6
pF
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