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參數(shù)資料
| 型號： | K7J643682M-FECI30 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 72Mb M-die DDRII SRAM Specification |
| 中文描述： | 72Mb的M -模條DDRII規(guī)格的SRAM |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 326K |
| 代理商： | K7J643682M-FECI30 |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
K7J643682M
K7J641882M
- 2 -
Rev 1.0
Aug. 2005
Document Title
2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
1.0
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
1. Initial document.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
1. Update the power consumption (Icc & Isb)
1. Finalize the datasheet
Draft Date
Mar. 9, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
May. 17, 2005
Aug. 2, 2005
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| K7K1618T2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
| K7K1618U2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
| K7K1636T2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
| K7K1636U2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
| K7K3218T2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM |
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