- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374294 > K7N801845B (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM PDF資料下載
參數(shù)資料
| 型號： | K7N801845B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
| 中文描述： | 256Kx36 |
| 文件頁數(shù)： | 10/18頁 |
| 文件大小： | 379K |
| 代理商： | K7N801845B |
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 10 -
Rev 3.0
Nov 2003
K7N801845B
K7N803645B
DC ELECTRICAL CHARACTERISTICS
(V
DD
=2.5V
±
5%, T
A
=0
°
C to +70
°
C)
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled,
-2
+2
μ
A
Operating Current
I
CC
Device Selected , I
OUT
=0mA
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-16
-
330
mA
1,2
-13
-
270
Standby Current
I
SB
Device deselected, I
OUT
=0mA,
ZZ
≤
V
IL
, f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V, f=0,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
-16
-
130
mA
-13
-
110
I
SB1
-
100
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
60
mA
Output Low Voltage
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage
V
IL
-0.3*
0.7
V
Input High Voltage
V
IH
1.7
V
DD
+0.3**
V
3
(T
A
=0 to 70
°
C, V
DD
=2.5V
±
5%, unless otherwise specified)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
Input Pulse Level
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80%)
1.0V/ns
Input and Output Timing Reference Levels
1.25V
Output Load
See Fig. 1
V
SS
V
IH
V
SS-
0.8V
20% t
CYC
(MIN)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7N803645M | 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| K7N801845M | 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| K7P403622B-HC20 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| K7P403622B-HC25 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| K7P403622B | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N801845B-QC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N801845B-QC13000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 4.2ns 100-Pin TQFP Tray |
| K7N801845B-QC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N801845B-QC16/13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM |
| K7N801845M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。