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參數資料
| 型號： | K7N803645M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| 中文描述： | 256 × 36 |
| 文件頁數： | 9/18頁 |
| 文件大?。?/td> | 282K |
| 代理商： | K7N803645M |
K7N803645M
K7N801845M
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 9 -
Rev 3.0
November 1999
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
′
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*Note
:
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 3.6
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.3 to 3.6
V
Power Dissipation
P
D
1.4
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C)
*Note :
V
DD
and V
DDQ
must be supplied with identical vlotage levels
.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
2.375
2.5
2.625
V
V
DDQ
2.375
2.5
2.625
V
Ground
V
SS
0
0
0
V
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note :
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDI-
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
8
pF
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| K7P161866A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
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