參數(shù)資料
型號(hào)： K7P403622B-HC16
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
中文描述： 128K × 36至
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 280K
代理商： K7P403622B-HC16
Rev 1.2
Jul. 2003
- 5 -
K7P401822B
128Kx36 & 256Kx18 SRAM
K7P403622B
TRUTH TABLE
NOTE
: K & K are complementary
K
ZZ
G
SS
SW
SWa
SWb
SWc
SWd
DQa
DQb
DQc
DQd
Operation
X
H
X
X
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Power Down Mode. No Operation
X
L
H
X
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Output Disabled.
↑
L
L
H
X
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Output Disabled. No Operation
↑
L
L
L
H
X
X
X
X
D
OUT
D
OUT
D
OUT
D
OUT
Read Cycle
↑
L
X
L
L
H
H
H
H
Hi-Z
Hi-Z
Hi-Z
Hi-Z
No Bytes Written
↑
L
X
L
L
L
H
H
H
D
IN
Hi-Z
Hi-Z
Hi-Z
Write first byte
↑
L
X
L
L
H
L
H
H
Hi-Z
D
IN
Hi-Z
Hi-Z
Write second byte
↑
L
X
L
L
H
H
L
H
Hi-Z
Hi-Z
D
IN
Hi-Z
Write third byte
↑
L
X
L
L
H
H
H
L
Hi-Z
Hi-Z
Hi-Z
D
IN
Write fourth byte
↑
L
X
L
L
L
L
L
L
D
IN
D
IN
D
IN
D
IN
Write all bytes
ABSOLUTE MAXIMUM RATINGS
NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Value
Unit
Note
Core Supply Voltage Relative to V
SS
V
DD
-0.3 to 4.6
V
Output Supply Voltage Relative to V
SS
V
DDQ
V
DD
V
Voltage on any I/O pin Relative to V
SS
V
TERM
-0.3 to V
DD
+0.3
V
Output Short-Circuit Current
I
OUT
25
mA
Operating Temperature
T
OPR
0 to 70
°
C
Storage Temperature
T
STG
-65 to 150
°
C
RECOMMENDED DC OPERATING CONDITIONS
NOTE
1. For operation with differential PECL clock inputs.
2. For operation with single ended or differential LVCMOS / LVTTL clock input.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Core Power Supply Voltage
V
DD
3.15
3.3
3.45
V
Output Power Supply Voltage (for 2.5V I/O)
V
DDQ
2.375
2.5
2.9
V
Output Power Supply Voltage (for 3.3V I/O)
V
DDQ
3.135
3.3
3.6
V
Input High Level (for 2.5V I/O)
V
IH
1.7
-
V
DD
+0.3
V
Input Low Level (for 2.5V I/O)
V
IL
-0.3
-
0.7
V
Input High Level (for 3.3V I/O)
V
IH
2.0
-
V
DD
+0.3
V
Input Low Level (for 3.3V I/O)
V
IL
-0.3
-
0.8
V
PECL Clock Input High Level
V
IH
-PECL
2.135
-
2.420
V
1
PECL Clock Input Low Level
V
IL
-PECL
1.490
-
1.825
V
1
Clock Input Signal Voltage
V
IN
-0.3
-
3.45
V
2
Clock Input Differential Voltage
V
DIF
-CLK
0.2
-
V
DD
+0.6
V
2
Clock Input Common Mode Voltage
V
CM
-CLK
1.1
-
2.1
V
2
Operating Junction Temperature
T
J
10
-
110
°
C
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