參數(shù)資料
型號(hào)： K7Q161854A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx36-bit, 1Mx18-bit QDR SRAM
中文描述： 512Kx36位，1Mx18位的國防評(píng)估報(bào)告的SRAM
文件頁數(shù)： 9/17頁
文件大?。?/td> 510K
代理商： K7Q161854A
512Kx36 & 1Mx18 QDR
TM
b4 SRAM
- 9 -
Rev 1.0
July. 2002
K7Q163654A
K7Q161854A
DC ELECTRICAL CHARACTERISTICS
(V
DD
=2.5V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes:
1. Minimum cycle. I
OUT
=0mA.
2. |I
OH
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OH
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
3. |I
OL
|=(V
DDQ
/2)/(RQ/5)
±
15% @V
OL
=V
DDQ
/2 for 175
≤
RQ
≤
350
.
4. Minimum Impedance Mode when ZQ pin is connected to V
SS
.
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
8. These are DC test criteria. DC design criteria is V
REF
±
50mV. The AC V
IH
/V
IL
levels are defined separately for measuring
timing parameters.
9. V
IL
(Min)DC=
-
0.3V, V
IL
(Min)AC=-1.5V(pulse width
≤
3ns).
10. V
IH
(Max)DC=
V
DDQ
+0.3, V
IH
(Max)AC=
V
DDQ
+0.85V(pulse width
≤
3ns).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DDQ
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled,
-2
+2
Operating Current (x18) : DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-20
-
520
mA
1,5
-16
-
460
-13
-
430
-10
-
390
Operating Current (x36) : DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-20
-
600
mA
1,5
-16
-
550
-13
-
490
-10
-
420
Standby Current(NOP) : DDR
I
SB1
Device deselected, I
OUT
=0mA,
f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-20
-
200
mA
1,6
-16
-
190
-13
-
180
-10
-
170
Output High Voltage
V
OH1
V
DDQ
/2
V
DDQ
V
2,7
Output Low Voltage
V
OL1
V
SS
V
DDQ
/2
V
3,7
Output High Voltage
V
OH2
I
OH
=-1.0mA
V
DDQ
-0.2
V
DDQ
V
4
Output Low Voltage
V
OL2
I
OL
=1.0mA
V
SS
0.2
V
4
Input Low Voltage
V
IL
-0.3
V
REF
-0.1
V
8,9
Input High Voltage
V
IH
V
REF
+0.1
V
DDQ
+0.3
V
8,10
ABSOLUTE MAXIMUM RATINGS*
*Note:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
DDQ
must not exceed V
DD
during normal operation.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.5 to 3.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
-0.5 to V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.5 to V
DD+
0.3
V
Power Dissipation
P
D
1.8
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
相關(guān)PDF資料
PDF描述
K7Q161854A-FC10 512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q161854A-FC13 512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q161854A-FC16 512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q161854A-FC20 512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q163654A 512Kx36-bit, 1Mx18-bit QDR SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7Q161854A-FC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q161854A-FC13 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM
K7Q161854A-FC16 制造商:Samsung Semiconductor 功能描述:
K7Q161854A-FC20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM
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