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參數(shù)資料
| 型號： | K7Q163652A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 505K |
| 代理商： | K7Q163652A |
512Kx36 & 1Mx18 QDR
TM
b2 SRAM
- 7 -
Rev 1.0
July 2002
K7Q163652A
K7Q161852A
READ
DDR READ
DDR WRITE
READ NOP
POWER-UP
WRITE NOP
LOAD NEW
WRITE ADDRESS
LOAD NEW
READ ADDRESS
ALWAYS
(FIXED)
WRITE
STATE DIAGRAM
Notes
: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
ALWAYS
(FIXED)
READ
WRITE
READ
WRITE
READ
WRITE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7Q161854A | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q161854A-FC10 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q161854A-FC13 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q161854A-FC16 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q161854A-FC20 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7Q163654A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
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