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參數資料
| 型號： | K7Q163662B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 QDRTM b2 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數： | 7/17頁 |
| 文件大?。?/td> | 335K |
| 代理商： | K7Q163662B |
512Kx36 & 1Mx18 QDR
TM
b2 SRAM
- 7 -
Rev 1.0
Mar. 2004
K7Q163662B
K7Q161862B
READ
DDR READ
DDR WRITE
READ NOP
POWER-UP
WRITE NOP
LOAD NEW
WRITE ADDRESS
LOAD NEW
READ ADDRESS
ALWAYS
(FIXED)
WRITE
STATE DIAGRAM
Notes
: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
ALWAYS
(FIXED)
READ
WRITE
READ
WRITE
READ
WRITE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K7Q163662B-FC16T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNCQUAD DATA RATE SRAME 512KX36FBGA, T/R - Tape and Reel |
| K7Q163664B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR TM b4 SRAM |
| K7Q163664B_10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM b4 SRAM |
| K7Q163664B-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR TM b4 SRAM |
| K7Q163682A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDR b2 SRAM |
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