參數(shù)資料
型號(hào)： K7R163682B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
中文描述： 512Kx36
文件頁數(shù)： 8/19頁
文件大?。?/td> 428K
代理商： K7R163682B
512Kx36 & 1Mx18 & 2Mx9 QDR
TM
II b2 SRAM
- 8 -
Rev 3.0
June. 2004
K7R163682B
K7R161882B
K7R160982B
READ
DDR READ
WRDDR WRITE
READ NOP
POWER-UP
WRITE NOP
LOAD NEW
WRITE ADDRESS
LOAD NEW
READ ADDRESS
ALWAYS
(FIXED)
WRITE
STATE DIAGRAM
Notes
: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case.
3. Read and write state machine can be active simulateneously.
4. State machine control timing sequence is controlled by K.
ALWAYS
(FIXED)
READ
WRITE
READ
WRITE
READ
WRITE
相關(guān)PDF資料
PDF描述
K7R321884M-FC16 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7R323684M 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7R323684M-FC16 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7R323684M-FC20 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7R323684M-FC25 1Mx36 & 2Mx18 QDRTM II b4 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7R163682B-EC25000 制造商:Samsung Semiconductor 功能描述:16MSYNC QDRII SRAME 512KX36FBGA, LEAD FREE - Trays
K7R163682B-FC16000 制造商:Samsung Semiconductor 功能描述:16M SYNC QDRII SRAM 512KX36 FBGA - Bulk
K7R163682B-FC16T00 制造商:Samsung Semiconductor 功能描述:16MSYNC QDRII SRAME 512KX36FBGA, T/R - Tape and Reel
K7R163682B-FC20T00 制造商:Samsung Semiconductor 功能描述:16MSYNC QDRII SRAME 512KX36FBGA, T/R - Tape and Reel
K7R163682B-FC25000 制造商:Samsung Semiconductor 功能描述:16MSYNC QDRII SRAME 512KX36FBGA, - Trays
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