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參數資料
| 型號： | K7R321884M-FC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 QDRTM II b4 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數： | 12/18頁 |
| 文件大?。?/td> | 195K |
| 代理商： | K7R321884M-FC20 |
- 12 -
Rev 2.0
Dec. 2003
1Mx36 & 2Mx18 QDR
TM
II b4 SRAM
K7R323684M
K7R321884M
SRAM#1
D
SA
R W BW
0
Q
K
CQ
K
C C
SRAM#4
R
Vt
Vt
Vt
R=50
Vt=V
REF
Vt
Vt
R
R=250
BW
1
D
SA
RW BW
0
Q
K
C C
BW
1
K
APPLICATION INRORMATION
Data In
Data Out
Address
R
W
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
THERMAL RESISTANCE
Note
: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. T
J
=T
A
+ P
D
x
θ
JA
PRMETER
SYMBOL
TYP
Unit
°
C
/W
°
C
/W
°
C
/W
NOTES
Junction to Ambient
θ
JA
20.8
Junction to Case
θ
JC
θ
JB
2.3
Junction to Pins
4.3
PIN CAPACITANCE
Note
: 1. Parameters are tested with RQ=250
and V
DDQ
=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
TYP
MAX
Unit
NOTES
Address Control Input Capacitance
C
IN
V
IN
=0V
4
5
pF
Input and Output Capacitance
C
OUT
V
OUT
=0V
6
7
pF
Clock Capacitance
C
CLK
-
5
6
pF
CQ
ZQ R=250
CQ
CQ
ZQ
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
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