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參數(shù)資料
| 型號： | K7R323684M-FC16 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 QDRTM II b4 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大小： | 195K |
| 代理商： | K7R323684M-FC16 |
- 13 -
Rev 2.0
Dec. 2003
1Mx36 & 2Mx18 QDR
TM
II b4 SRAM
K7R323684M
K7R321884M
t
KLKH
t
KHKH
t
KHKH
t
KHKL
t
AVKH
t
KHAX
A1
A2
t
IVKH
t
KHIX
Q1-1
Q1-2
Q1-3
Q1-4
Q2-3
t
CHQX
1
t
KHCH
t
CHQV
t
CHQX
t
CQHQV
t
CQHQX
t
CHCQX
t
CHCQV
t
CHQV
t
CHCQX
t
CHCQV
t
KLKH
t
KHKH
t
KHKL
t
KHKH
Note
:
1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
2. Outputs are disabled one cycle after a NOP.
K
SA
R
K
Q
(Data Out)
C
C
TIMING WAVE FORMS OF READ AND NOP
Don
′
t Care Undefined
CQ
CQ
Q2-1
Q2-2
D1-1
D1-2
D1-3
D1-4
K
SA
W
K
D(Data In)
TIMING WAVE FORMS OF WRITE AND NOP
WRITE
D2-1
D2-2
t
DVKH
t
KHDX
Don
′
t Care Undefined
Note
:
1. D1-1 refers to input to address A1+0, D1-2 refers to input to address A1+1, i.e the next internal burst address following A1+0.
2. BWx ( NWx ) assumed active.
t
KLKH
t
KHKH
t
KHKH
t
KHKL
t
AVKH
t
KHAX
A1
A2
t
IVKH
t
KHIX
D2-3
D2-4
t
KHIX
Q2-4
t
CHQZ
READ
NOP
NOP
READ
NOP
NOP
WRITE
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