參數(shù)資料
型號: K7R323684M-FC25
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Mx36 & 2Mx18 QDRTM II b4 SRAM
中文描述: 1Mx36
文件頁數(shù): 11/18頁
文件大?。?/td> 195K
代理商: K7R323684M-FC25
- 11 -
Rev 2.0
Dec. 2003
1Mx36 & 2Mx18 QDR
TM
II b4 SRAM
K7R323684M
K7R321884M
AC TIMING CHARACTERISTICS
(V
DD
=1.8V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes
: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
2. Control signal are R and W.
In case of BW
0
,BW
1
(BW
2
, BW
3
, also for x36) signal follow the data setup/hold times.
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX
1
is bigger than tCHQZ.
The specs as shown do not imply bus contention beacuse tCHQX
1
is a MIN parameter that is worst case at totally different test conditions
(0
°
C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70
°
C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
PARAMETER
SYMBOL
-25
-20
-16
UNITS NOTES
MIN
MAX
MIN
MAX
MIN
MAX
Clock
Clock Cycle Time (K, K, C, C)
t
KHKH
4.00
6.30
5.00
7.88
6.00
8.40
ns
Clock Phase Jitter (K, K, C, C)
t
KC var
0.20
0.20
0.20
ns
5
Clock High Time (K, K, C, C)
t
KHKL
1.60
2.00
2.40
ns
Clock Low Time (K, K, C, C)
t
KLKH
1.60
2.00
2.40
ns
Clock to Clock (K
↑ →
K
, C
C
)
Clock to data clock (K
↑ →
C
, K
↑→
C
)
t
KHKH
1.80
2.20
2.70
ns
t
KHCH
0.00
1.80
0.00
2.30
0.00
2.80
ns
DLL Lock Time (K, C)
t
KC lock
1024
1024
1024
cycle
6
K Static to DLL reset
t
KC reset
30
30
30
ns
Output Times
C, C High to Output Valid
t
CHQV
0.45
0.45
0.50
ns
3
C, C High to Output Hold
t
CHQX
-0.45
-0.45
-0.50
ns
3
C, C High to Echo Clock Valid
t
CHCQV
0.45
0.45
0.50
ns
C, C High to Echo Clock Hold
t
CHCQX
-0.45
-0.45
-0.50
ns
CQ, CQ High to Output Valid
t
CQHQV
0.30
0.35
0.40
ns
CQ, CQ High to Output Hold
t
CQHQX
-0.30
-0.35
-0.40
ns
C, High to Output High-Z
t
CHQZ
0.45
0.45
0.50
ns
3
C, High to Output Low-Z
t
CHQX1
-0.45
-0.45
-0.50
ns
3
Setup Times
Address valid to K rising edge
t
AVKH
0.50
0.60
0.70
ns
Control inputs valid to K rising edge
t
IVKH
0.50
0.60
0.70
ns
2
Data-in valid to K, K rising edge
t
DVKH
0.35
0.40
0.50
ns
Hold Times
K rising edge to address hold
t
KHAX
0.50
0.60
0.70
ns
K rising edge to control inputs hold
t
KHIX
0.50
0.60
0.70
ns
2
K, K rising edge to data-in hold
t
KHDX
0.35
0.40
0.50
ns
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