參數(shù)資料
型號： K7R641882M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Electrical, Duct/Raceway (Trunking); RoHS Compliant: Yes
中文描述： 2Mx36
文件頁數(shù)： 14/19頁
文件大?。?/td> 364K
代理商： K7R641882M
2Mx36 & 4Mx18 & 8Mx9 QDR
TM
II b2 SRAM
- 14 -
Rev 0.5
Oct. 2004
Preliminary
K7R643682M
K7R641882M
K7R640982M
t
KLKH
t
KHKH
t
KHKH
t
KHKL
t
AVKH
t
KHAX
A1
A2
A3
t
IVKH
t
KHIX
t
CHQX
1
t
KHCH
t
CHQV
t
CHQX
t
CHQZ
t
CQHQV
t
CQHQX
t
CHCQX
t
CHCQV
t
CHQV
t
CHCQX
t
CHCQV
t
KLKH
t
KHKH
t
KHKL
t
KHKH
Note
:
1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0.
2. Outputs are disabled one cycle after a NOP.
K
SA
R
K
Q(Data Out)
C
C
TIMING WAVE FORMS OF READ AND NOP
Don
′
t Care Undefined
CQ
CQ
Q1-1
Q1-2
Q2-1
Q2-2
Q3-1
t
KLKH
t
KHKH
t
KHKH
t
KHKL
t
AVKH
t
KHAX
A1
A2
A3
D1-1
D1-2
D2-1
D2-2
K
SA
W
K
D(Data In)
TIMING WAVE FORMS OF WRITE AND NOP
D3-1
D3-2
t
IVKH
t
KHIX
t
KHIX
t
DVKH
t
KHDX
Don
′
t Care Undefined
Note
:
1.D1-1 refers to input to address A1+0, D1-2 refers to input to address A1+1, i.e the next internal burst address following A1+0.
2. BWx assumed active.
READ
NOP
NOP
READ
READ
WRITE
NOP
NOP
WRITE
WRITE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7R641882M-EC20000 制造商:Samsung Semiconductor 功能描述:
K7R641882M-EI20000 制造商:Samsung SDI 功能描述:
K7R641882M-FC16000 制造商:Samsung Semiconductor 功能描述:72M SYNC QDRII SRAME 4MX18FBGA - Bulk
K7R641882M-FC16T00 制造商:Samsung Semiconductor 功能描述:72M SYNC QDRII SRAME 4MX18FBGA, T/R - Tape and Reel
K7R641882M-FC20 制造商:Samsung Semiconductor 功能描述:
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