參數(shù)資料
型號： K8D6316UBM-LI08
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DRAM
英文描述： 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
中文描述： 6400位（800萬x8/4M x16）的雙銀行NOR閃存
文件頁數(shù)： 31/48頁
文件大?。?/td> 658K
代理商： K8D6316UBM-LI08
FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.5
March 2005
31
DC CHARACTERISTICS
RECOMMENDED OPERATING CONDITIONS
( Voltage reference to Vss )
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.0
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
Notes
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output pins is Vcc+0.5V which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.5V on A9, OE, RESET and WP/ACC pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on A9, OE, RESET pins is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
-0.5 to +4.0
V
A9, OE , RESET
V
IN
-0.5 to +12.5
WP/ACC
-0.5 to +12.5
All Other Pins
-0.5 to +4.0
Temperature Under Bias
Commercial
T
bias
-10 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Operating Temperature
T
A
(Commercial Temp.)
0 to +70
°
C
T
A
(Industrial Temp.)
-40 to + 85
°
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
1.0
-
+
1.0
μ
A
A9,OE,RESET Input Leakage
Current
I
LIT
V
CC
=V
CCmax
, A9,OE,RESET=12.5V
-
-
35
μ
A
WP/ACC Input Leakage Current
I
LIW
V
CC
=V
CCmax
, WP/ACC=12.5V
-
-
35
μ
A
Output Leakage Current
I
LO
V
OUT
=V
SS
to V
CC
,V
CC
=V
CCmax
,OE=V
IH
1.0
-
+
1.0
μ
A
Active Read Current (1)
I
CC
1
CE=V
IL
, OE=V
IH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
I
CC
2
CE=V
IL
, OE=V
IH,
WE=V
IL
-
15
30
mA
Read While Program Current
(3)
I
CC
3
CE=V
IL
, OE=V
IH
-
25
50
mA
Read While Erase Current (3)
I
CC
4
CE=V
IL
, OE=V
IH
-
25
50
mA
Program While Erase Suspend
Current
I
CC
5
CE=V
IL
, OE=V
IH
-
15
35
mA
ACC Accelerated Program
Current
I
ACC
CE=V
IL
, OE=V
IH
ACC Pin
-
5
10
mA
Vcc Pin
-
15
30
Standby Current
I
SB
1
V
CC
=V
CCmax
,CE, RESET=V
CC
±
0.3V
WP/ACC= V
CC
±
0.3V or Vss
±
0.3V
V
CC
=V
CCmax
, RESET=Vss
±
0.3V,
WP/ACC=V
CC
±
0.3V or Vss
±
0.3V
V
IH
=V
CC
±
0.3V, V
IL
=V
SS
±
0.3V,
OE=V
IL,
I
OL
=I
OH
=0
-
10
30
μ
A
Standby Current During Reset
I
SB
2
-
10
30
μ
A
Automatic Sleep Mode
I
SB
3
-
10
30
μ
A
Input Low Level
V
IL
-0.5
-
0.8
V
Input High Level
V
IH
0.7xVcc
-
V
CC
+0.3
V
Voltage for WP/ACC Block Tempo-
rarily Unprotect and Program Accel-
eration (4)
V
HH
V
CC
= 3.0V
±
0.3V
8.5
-
12.5
V
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