參數資料
型號： K9F1208Q0A-XXB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數： 14/45頁
文件大?。?/td> 807K
代理商： K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
13
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F12XXX0A
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3.
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F12XXX0A-XCB0 :TA=0 to 70
°
C, K9F12XXX0A-XIB0:TA=-40 to 85
°
C
K9F12XXQ0A : Vcc=1.70V~1.95V , K9F12XXU0A : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
4,026
-
4,096
Blocks
Parameter
K9F12XXQ0A
K9F12XXU0A
Input Pulse Levels
0V to VccQ
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
VccQ/2
1.5V
K9F12XXQ0A:Output Load (VccQ:1.8V +/-10%)
K9F12XXU0A:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9F12XXU0A:Output Load (VccQ:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(4clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(4clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
L
L
L
H
H
X
During Read(Busy) on K9F12XXX0A-Y,P or K9F1208U0A-V,F
X
X
X
X
H
X
During Read(Busy) on the devices except K9F12XXX0A-Y,P and
K9F1208U0A-V,F
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
μ
s
Dummy Busy Time for Multi Plane Program
t
DBSY
1
10
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
1
cycle
Spare Array
-
-
2
cycles
Block Erase Time
t
BERS
-
2
3
ms
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相關代理商/技術參數
參數描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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