參數(shù)資料
型號: K9F1208Q0A-XXB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述: 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù): 24/45頁
文件大?。?/td> 807K
代理商: K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
23
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
t
CHZ
t
OH
* Status Read Cycle
CE
WE
CLE
RE
I/O
X
70h
Status Output
t
CLR
t
CLH
t
CS
t
WP
t
CH
t
DS
t
DH
t
REA
t
IR
t
OH
t
OH
t
WHR
t
CEA
t
CLS
READ1 OPERATION
(READ ONE PAGE)
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
1)
NOTES
: 1) is only valid
on K9F1208U0A-Y,P or K9F1208U0A-V,F
On K9F1208U0A-Y,P or K9F1208U0A-V,F
CE must be held
low during tR
CE
CLE
R/B
I/O
X
WE
ALE
RE
Busy
00h or 01h A
0
~ A
7
A
9
~ A
16
A
17
~ A
24
Dout N
Dout N+1
Dout N+2
Column
Address
Page(Row)
Address
t
WB
t
AR
t
R
t
RC
t
RHZ
t
OH
t
RR
Dout m
t
RB
t
CRY
t
WC
A
25
t
CEH
1)
N Address
t
CHZ
t
RHZ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory