參數(shù)資料
型號(hào)： K9F1208Q0A-XXB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 3/45頁(yè)
文件大?。?/td> 807K
代理商： K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
2
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200
μ
s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F12XXX0A
′
s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F12XXX0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9F12XXQ0A) : 1.70~1.95V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F12XXU0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F12XXX0A-DCB0/DIB0
63- Ball TBGA
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXU0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F12XXX0A-HCB0/HIB0
63- Ball TBGA - Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1208Q0A-D,H
1.70 ~ 1.95V
X8
TBGA
K9F1216Q0A-D,H
X16
K9F1208U0A-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F1208U0A-D,H
TBGA
K9F1208U0A-V,F
WSOP1
K9F1216U0A-Y,P
X16
TSOP1
K9F1216U0A-D,P
TBGA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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