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參數(shù)資料
| 型號： | K9F1208Q0A-XXB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁數(shù)： | 37/45頁 |
| 文件大小： | 807K |
| 代理商： | K9F1208Q0A-XXB0 |
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K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
36
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
Restriction in addressing with Multi Plane Page Program
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for
the selected pages at one operation must be the same. Figure 14 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure15.
80h
Plane 2
11h
80h
11h
80h
11h
80h
10h
Plane 0
Plane3
Plane 1
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Page 0
Page 1
Page 31
Page 30
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Figure 16. Multi-Plane Page Program & Read Status Operation
80h
528 bytes(x8 device)
or 264words(x16 device)
I/O
0
~
7
R/B
Address & Data Input
I/O
Pass
10h
71h
Fail
t
PROG
Last Plane input
Multi-Plane Block Erase
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 17. Four Block Erase Operation
60h
A
0
~ A
7
& A
9
~ A
25
I/O
X
R/B
Address
(3 Cycle)
60h
60h
60h
D0h
71h
I/O
Pass
Fail
t
BERS
Address
(3 Cycle)
Address
(3 Cycle)
Address
(3 Cycle)
Figure 14. Multi-Plane Program & Read Status Operation
Figure 15. Addressing Multiple Planes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208UOM | 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲器) |
| K9F1608W0A- | 2M x 8 Bit NAND Flash Memory |
| K9F1608W0A-TCB0 | TV 128C 128#22D SKT RECP |
| K9F1608W0A-TIB0 | TV 37C 37#16 PIN RECP |
| K9F1G08Q0A | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208Q0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
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