參數(shù)資料
型號(hào)： K9F1208UOM
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲(chǔ)器)
中文描述： 6400 × 8位NAND閃存（64米× 8位與非閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 33/41頁(yè)
文件大?。?/td> 1006K
代理商： K9F1208UOM
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
33
Restriction in addressing with Multi Plane Page Program
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for
the selected pages at one operation must be the same. Figure 10 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure11.
80h
Plane 2
11h
80h
11h
80h
11h
80h
10h
Plane 0
Plane3
Plane 1
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Page 0
Page 1
Page 31
Page 30
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Figure 12. Multi-Plane Page Program & Read Status Operation
80h
A
0
~ A
7
& A
9
~ A
25
528 Byte Data
I/O
0
~
7
R/B
Address & Data Input
I/O
Pass
10h
71h
Fail
t
PROG
Last Plane input
Multi-Plane Block Erase
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 13. Four Block Erase Operation
60h
A
0
~ A
7
& A
9
~ A
25
I/O
0
~
7
R/B
Address
(3 Cycle)
60h
60h
60h
D0h
71h
I/O
Pass
Fail
t
BERS
Address
(3 Cycle)
Address
(3 Cycle)
Address
(3 Cycle)
Figure 10. Multi-Plane Program & Read Status Operation
Figure 11. Addressing Multiple Planes
相關(guān)PDF資料
PDF描述
K9F1608W0A- 2M x 8 Bit NAND Flash Memory
K9F1608W0A-TCB0 TV 128C 128#22D SKT RECP
K9F1608W0A-TIB0 TV 37C 37#16 PIN RECP
K9F1G08Q0A FLASH MEMORY
K9F1G08U0A FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208UOMYCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208UOM-YCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208X0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208X0C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1216D0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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