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參數資料
| 型號： | K9F1608W0A-TCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 128C 128#22D SKT RECP |
| 中文描述： | 200萬× 8位NAND閃存 |
| 文件頁數： | 11/25頁 |
| 文件大?。?/td> | 443K |
| 代理商： | K9F1608W0A-TCB0 |
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
11
Erase Flow Chart
Start
SR. 6 = 1
or R/B = 1
SR. 0 = 0
No
*
Write 60H
Write Block Address
Write D0H
Write 70H
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00H
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
Block Replacement
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an exter-
nal buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
NAND Flash Technical Notes
(Continued)
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1608W0A-TIB0 | TV 37C 37#16 PIN RECP |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08U0A | FLASH MEMORY |
| K9F1G08Q0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G16Q0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F1608W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory |
| K9F1G08B0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays |
| K9F1G08D0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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