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參數(shù)資料
| 型號(hào)： | K9F1608W0A-TIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 37C 37#16 PIN RECP |
| 中文描述： | 200萬× 8位NAND閃存 |
| 文件頁數(shù)： | 8/25頁 |
| 文件大小： | 443K |
| 代理商： | K9F1608W0A-TIB0 |
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
8
AC Characteristics for Operation
NOTE
: 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to V
OL
.
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
3. To break the sequential read cycle, CE must be held high for longer time than t
CEH
.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ns
ALE to RE Delay
t
AR
150
-
ALE to RE Delay(read ID)
t
AR1
200
-
ns
CE to RE Delay( ID read)
t
CR
200
-
ns
Ready to RE Low
t
RR
20
-
ns
WE High to Busy
t
WB
-
200
ns
Read Cycle Time
t
RC
80
-
ns
RE Access Time
t
REA
-
45
ns
RE High to Output Hi-Z
t
RHZ
5
20
ns
CE High to Output Hi-Z
t
CHZ
-
30
ns
RE High Hold Time
t
REH
20
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
200
ns
CE High to Ready(in case of interception by CE at read)
(1)
t
CRY
-
100+tr(R/B)
(2)
ns
CE High Hold Time(at the last serial read)
(3)
t
CEH
250
-
ns
RE Low to Status Output
t
RSTO
-
45
ns
CE Low to Status Output
t
CSTO
-
55
ns
RE High to WE Low
t
RHW
0
-
ns
WE High to RE Low
t
WHR
50
-
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
μ
s
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
20
-
ns
CLE Hold Time
t
CLH
40
-
ns
CE Setup Time
t
CS
20
-
ns
CE Hold Time
t
CH
40
-
ns
WE Pulse Width
t
WP
40
-
ns
ALE Setup Time
t
ALS
20
-
ns
ALE Hold Time
t
ALH
40
-
ns
Data Setup Time
t
DS
30
-
ns
Data Hold Time
t
DH
20
-
ns
Write Cycle Time
t
WC
80
-
ns
WE High Hold Time
t
WH
20
-
ns
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|---|---|
| K9F1G08B0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays |
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| K9F1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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| K9F1G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
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