參數(shù)資料
型號： K9F1G08Q0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 1/37頁
文件大小： 677K
代理商： K9F1G08Q0A
FLASH MEMORY
1
K9F1G08U0A
K9F1G08Q0A
Document Title
128M x 8 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
Remark
Advance
Preliminary
Preliminary
History
1. Initial issue
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26)
-
tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
2. Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram
.
1. PKG(TSOP1, WSOP1) Dimension Change
Draft Date
Aug. 24. 2003
Jan. 27. 2004
Apr. 23. 2004
May. 19. 2004
相關(guān)PDF資料
PDF描述
K9F1G08U0A FLASH MEMORY
K9F1G08Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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