參數(shù)資料
型號(hào)： K9F1G08Q0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁(yè)數(shù)： 32/37頁(yè)
文件大?。?/td> 677K
代理商： K9F1G08Q0A
FLASH MEMORY
32
K9F1G08U0A
K9F1G08Q0A
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte data registers, and is available only within a block.
Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed
into memory cell.
Figure 9. Random Data Input In a Page
80h
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
PROG
85h
Address & Data Input
After writing the first set of data up to 2112byte into the selected cache registers, Cache Program command (15h) instead of actual
Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache reg-
isters to data registers, the device remains in Busy state for a short period of time(tCBSY) and has its cache registers ready for the
next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may
be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the pre-
viouse page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command,
tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the
pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit(I/
O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of
programming only with R/B, the last page of the target programming sequence must be progammed with actual Page Program com-
mand (10h).
Figure 10. Cache Program
(available only within a block)
t
CBSY
80h
R/B
80h
Address &
Data Input
15h
80h
Address &
Data Input
15h
80h
Address &
Data Input
10h
t
CBSY
t
CBSY
t
PROG
70h
Address &
Data Input*
15h
I/Ox
Col Add1,2 & Row Add1,2
Data
Col Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
"0"
"1"
相關(guān)PDF資料
PDF描述
K9F1G08U0A FLASH MEMORY
K9F1G08Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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