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參數(shù)資料
| 型號： | K9F1G08Q0M-PCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb Gb 1.8V NAND Flash Errata |
| 中文描述： | 1Gb的NAND閃存千兆1.8V的勘誤表 |
| 文件頁數(shù)： | 30/38頁 |
| 文件大?。?/td> | 713K |
| 代理商： | K9F1G08Q0M-PCB0 |
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FLASH MEMORY
29
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the com-
mand register along with four address cycles. In two consecutive read operations, the second one doesn’t need 00h command,
which five address cycles and 30h command initiates that operation.Two types of operations are available : random read, serial page
read The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device)
of data within the selected page are transferred to the data registers in less than 25
μ
s(t
R
). The system controller can detect the com-
pletion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may
be read out in 50ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device out-
put the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(4Cycle)
00h
Col Add1,2 & Row Add1,2
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1G08Q0M-PIB0 | DBM25PK |
| K9F1G16Q0M-PIB0 | DSUB |
| K9F1G08U0M | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-FCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-FIB0 | 1Gb Gb 1.8V NAND Flash Errata |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08Q0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08R0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0B-JIB0000 | 制造商:Samsung SDI 功能描述:PN may be NE SE |
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