參數(shù)資料
型號(hào)： K9F1G08Q0M-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁(yè)數(shù)： 12/38頁(yè)
文件大小： 713K
代理商： K9F1G08Q0M-YCB0
FLASH MEMORY
11
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F1GXXX0M
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks
.
Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction.
AC TEST CONDITION
(K9F1GXXX0M-XCB0 :TA=0 to 70
°
C, K9F1GXXX0M-XIB0:TA=-40 to 85
°
C
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1004
-
1024
Blocks
K9F1GXXQ0M : Vcc=1.70V~1.95V, K9F1GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F1GXXQ0M
K9F1GXXU0M
Input Pulse Levels
0V to Vcc
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
Vcc/2
1.5V
K9F1GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9F1GXXU0M:Output Load (Vcc:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9F1GXXU0M:Output Load (Vcc:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
Program / Erase Characteristics
NOTE
: 1. Max. time of
t
CBSY
depends on timing between internal program completion and data in
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
μ
s
μ
s
Dummy Busy Time for Cache Program
t
CBSY
3
700
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
4
cycles
Spare Array
-
-
4
cycles
Block Erase Time
t
BERS
-
2
3
ms
NOTE
: 1. X can be V
IL
or V
IH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
PRE
Mode
H
L
L
H
X
X
Read Mode Command Input
Address Input(4clock)
L
H
L
H
X
X
H
L
L
H
H
X
Write Mode Command Input
Address Input(4clock)
L
H
L
H
H
X
L
L
L
H
H
X
Data Input
L
L
L
H
X
X
Data Output
X
X
X
X
H
X
X
During Read(Busy)
X
X
X
X
X
H
X
During Program(Busy)
X
X
X
X
X
H
X
During Erase(Busy)
X
X
(1)
X
X
X
L
X
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料
PDF描述
K9F2808Q0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0M-YIB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08R0B-JIB0000 制造商:Samsung SDI 功能描述:PN may be NE SE
K9F1G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0B-PCB0000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays
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